![]() Heating - electric heating, RF heating, microwave heating.RF energy technology - lighting, medical technology, drying, automotive electronics.Radio-frequency (RF) technology - radio-frequency identification (RFID) RF plasma generator.Mobile radio - professional mobile radio, handheld transistor radio, analog radio, digital radio, digital mobile radio (DMR), land mobile radio system (LMRS), private mobile radio (PMR), Terrestrial Trunked Radio (TETRA).Radio technology - commercial radio, public safety radio, marine radio, amateur radio, portable radio, wideband, narrowband.Laser technology - laser drivers, carbon dioxide laser (CO 2 laser).Medical technology - magnetic resonance imaging (MRI).Industrial, Scientific and Medical band (ISM band) applications - particle accelerators, welding, continuous wave (CW) applications, linear applications, pulse applications.Gas detection - carbon monoxide detector (CO detector), methane detection.Avionics - ADS-B transponders, identification friend or foe (IFF) transponders, secondary surveillance radar (SSR), distance measuring equipment (DME), Mode S edge-localized mode (ELM), tactical data link (TDL), airband.Military technology - military communications.Electronic warfare - communications information warfare, multi-band communication systems.Automatic dependent surveillance – broadcast (ADS–B).Aerospace and defense technology - military applications.Manufacturers of LDMOS devices and foundries offering LDMOS technologies include TSMC, LFoundry, Tower Semiconductor, SAMSUNG, GLOBALFOUNDRIES, Vanguard International Semiconductor Corporation, STMicroelectronics, Infineon Technologies, RFMD, NXP Semiconductors (including former Freescale Semiconductor), SMIC, MK Semiconductors, Polyfet and Ampleon. Compared to other devices such as GaAs FETs they show a lower maximum power gain frequency. LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source breakdown voltage usually above 60 volts. The silicon-based RF LDMOS ( radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks, enabling the majority of the world's cellular voice and data traffic. As an example, the drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields. ![]() The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles. These transistors are often fabricated on p/p + silicon epitaxial layers. LDMOS ( laterally-diffused metal-oxide semiconductor) is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. ![]()
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